IXYS DE275

DE275-201N25A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
25
A
IDM
Tc = 25°C, pulse width limited by TJM
150
A
IAR
Tc = 25°C
25
A
EAR
Tc = 25°C
20
mJ
5
V/ns
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
>200
V/ns
590
W
284
W
3.0
W
RthJC
0.25
C/W
RthJHS
0.53
C/W
PDC
Tc = 25°C
Derate 1.9W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
TJ = 25°C unless otherwise specified
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 250µA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
RDS(on)
gfs
min.
typ.
200
2.5
13
TL
Weight
3.0
16
-55
1.6mm(0.063 in) from case for 10 s
ID25
=
25 A
RDS(on)
=
0.13 Ω
PDC
=
590 W
SD1
SD2
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
5.5
V
±100
nA
50
1
µA
mA
.13
Ω
18
S
+175
°C
°C
+175
SG2
Features
V
175
TJM
Tstg
SG1
max.
-55
TJ
200 V
DRAIN
Characteristic Values
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 15 V, ID = 0.5ID25, pulse test
=
GATE
IS = 0
PDHS
VDSS
°C
300
°C
2
g
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
DE275-201N25A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
max.
typ.
0.3
Ω
2500
pF
265
pF
42
pF
21
pF
5
ns
5
ns
8
ns
Toff
8
ns
Qg
81
nC
14
nC
42
nC
RG
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
Qgs
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgd
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
min.
typ.
max.
25
A
150
A
2.0
V
300
Trr
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical
note on the IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE275-201N25A
RF Power MOSFET
Fig. 1
Fig. 2
Typical Output Characteristics
Typical Transfer Characteristics
V DS = 60V, PW = 4uS
140
120
Top
ID, Drain Currnet (A)
ID, Drain Current (A)
120
100
80
60
40
100
80
Bottom
60
40
20
20
0
0
5
6
7
8
9
0
10
10
20
40
50
60
Fig. 4
Gate Charge vs. Gate-to-Source Voltage
VD S vs.Capacitance
V DS = 100V, ID = 12.5A
10000
16
Ciss
14
12
Capacitance (pF)
Gate-to-Source Voltage (V)
30
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to Source Voltage (V)
Fig. 3
9-10V
8V
7.5V
7V
6.5V
6V
5.5V
5V
10
8
6
4
1000
Coss
Crss
100
10
2
0
1
0
50
100
Gate Charge (nC)
150
0
20
40
60
80
100
VDS Voltage (V)
120
140
160
DE275-201N25A
RF Power MOSFET
Fig. 5 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE275-201N25A
RF Power MOSFET
201N25A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is
the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device
model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
10 DRAIN
Ld
4
Lg
Doff
D1crs
Roff
Rd
D2crs
20 GATE
6
8
1
5
Don
2
M3
Dcos
Rds
3
Ron
7
Ls
30 SOURCE
Figure 6 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de275-201n25a.html
Net List:
**********
*SYM=POWMOSN
.SUBCKT 201N25A 10 20 30
* TERMINALS: D G S
* 200 Volt 25 Amp .13 ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.5N
RD 4 1 .13
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=25.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0260 Rev 4
© 2009 IXYS RF
An
IXYS Company
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Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com