IXYS DE375

DE375-102N12A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
50MHz Maximum Frequency
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
12
A
IDM
Tc = 25°C, pulse width limited by TJM
72
A
IAR
Tc = 25°C
12
A
EAR
Tc = 25°C
30
mJ
5
V/ns
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
>200
V/ns
940
W
425
W
4.5
W
RthJC
0.16
C/W
RthJHS
0.35
C/W
IS = 0
PDC
PDHS
Tc = 25°C
Derate 3.7W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 250 µa
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
TJ = 125°C
VGS = 0
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
min.
1000
4.0
V
4.7
6.7
5.5
V
±100
nA
50
1
µA
mA
1.05
Ω
8.0
S
+175
°C
175
TJM
-55
Tstg
Weight
max.
-55
TJ
TL
typ.
1.6mm (0.063 in) from case for 10 s
=
1000 V
ID25
=
12 A
RDS(on)
≤
1.05 Ω
PDC
=
940 W
DRAIN
GATE
SG1
SG2
SD1
SD2
Features
Characteristic Values
TJ = 25°C unless otherwise specified
VDSS
°C
+175
°C
300
°C
3
g
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 50MHz
• Easy to mount—no insulators needed
• High power density
DE375-102N12A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
0.3
Ω
2500
pF
110
pF
25
pF
33
pF
5
ns
3
ns
5
ns
8
ns
77
nC
16
nC
42
nC
RG
Ciss
Coss
max.
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
Toff
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgd
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
IS
VGS = 0 V
12
A
ISM
Repetitive; pulse width limited by TJM
72
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
1.5
V
Trr
QRM
IF = IS, -di/dt = 100A/µs,
VR = 100V
typ.
max.
200
ns
0.6
µC
7
A
IRM
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical
note on the IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE375-102N12A
RF Power MOSFET
Fig. 1
Fig. 2
Typical Transfer Characteristics
V DS = 100V, PW = 40uS
30
45
Top
40
25
ID, Drain Currnet (A)
ID , Drain Current (A)
Typical Output Characteristics
35
30
25
20
15
10
Bottom
20
10V
9V
8V
7V
6.5V
6V
15
10
5
5
0
0
5.5
6
6.5
7
7.5
8
8.5
9
9.5
0
10
20
Fig. 4
Gate Charge vs. Gate-to-Source Voltage
V DS = 500V, ID = 6A
16
45
14
40
12
ID , Drain Currnet (A)
Gate-to-Source Voltage (V)
80
100
120
Extended Output Characteristics
Top
10
8
6
4
2
35
Bottom
30
10V
9V
8V
7V
6.5V
6V
25
20
15
10
5
0
0
0
20
40
60
80
100
120
Gate Charge (nC)
VDS vs. Capacitance
10000
Ciss
1000
Coss
100
Crss
10
1
0
100
200
300
400
500
VDS Voltage (V)
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig. 5
Capacitance (pF)
60
VDS, Drain-to-Source Voltage (V)
V GS, Gate-to Source Voltage (V)
Fig. 3
40
600
700
800
120
DE375-102N12A
RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE375-102N12A
RF Power MOSFET
102N12A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the
SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the
RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and
reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides
a varactor type response necessary for a high power device model. The turn on delay and
the turn off delay are adjusted via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de375-102n12a.html
Net List:
.SUBCKT 102N12A 10 20 30
* TERMINALS: D G S
* 1000 Volt 12 Amp 0.95 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.5N
RD 4 1 0.95
Doc #9200-0249 Rev 6
DCOS 3 1 D3
© 2009 IXYS RF
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
An
IXYS Company
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
2401 Research Blvd., Suite 108
Collins, CO USA 80526
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) Fort
970-493-1901 Fax: 970-493-1903
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
.ENDS