Advance Technical Information IXFK210N17T IXFX210N17T GigaMOSTM Power MOSFET VDSS ID25 = = 170V 210A Ω 7.5mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 170 170 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 210 160 580 A A A IA EAS TC = 25°C TC = 25°C 100 2 A J PD TC = 25°C 1150 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G (TAB) G = Gate S = Source BVDSS VGS = 0V, ID = 3mA 170 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 5.0 ± 200 z z z z z TJ = 150°C Easy to Mount Space Savings High Power Density Applications V z 7.5 mΩ z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) V 50 μA 3 mA = Drain = Drain Advantages z nA D TAB Features z Characteristic Values Min. Typ. Max. (TAB) S PLUS247 (IXFX) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100138(03/09) IXFK210N17T IXFX210N17T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 85 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 140 S 18.8 nF 2110 pF 260 pF 45 ns 40 ns 48 ns 32 ns 285 nC 78 nC 80 nC 0.13 RthJC RthCS TO-264 (IXFK) Outline °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 210 A ISM Repetitive, Pulse Width Limited by TJM 840 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr QRM IRM 200 IF = 105A, -di/dt = 100A/μs VR = 75V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T μC 9.00 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 0.56 Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK210N17T IXFX210N17T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 220 VGS = 10V 8V 7V 200 180 7V 160 250 140 120 ID - Amperes ID - Amperes VGS = 10V 8V 300 6V 100 80 200 6V 150 100 60 40 5V 50 5V 20 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 220 3.0 VGS = 10V 8V 7V 200 180 2.8 VGS = 10V 2.6 2.4 RDS(on) - Normalized ID - Amperes 160 6V 140 120 100 80 5V 60 2.2 I D = 210A 2.0 I D = 105A 1.8 1.6 1.4 1.2 1.0 40 0.8 20 0.6 0 0.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 3.4 External Lead Current Limit 3.2 VGS = 10V 160 3.0 2.6 2.4 ID - Amperes RDS(on) - Normalized 140 TJ = 175ºC 2.8 2.2 2.0 1.8 1.6 120 100 80 60 1.4 TJ = 25ºC 1.2 40 1.0 20 0.8 0 0.6 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade IXYS REF:F_210N17T(9W)4-02-09 IXFK210N17T IXFX210N17T Fig. 8. Transconductance 240 220 220 200 200 180 180 160 160 TJ = - 40ºC 25ºC 140 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 240 TJ = 150ºC 25ºC - 40ºC 120 100 80 140 120 150ºC 100 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 25 50 75 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 150 175 200 225 250 Fig. 10. Gate Charge 10 350 VDS = 85V 9 I D = 105A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 125 ID - Amperes 200 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 25 50 VSD - Volts 100 125 150 175 200 225 250 275 300 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 f = 1 MHz RDS(on) Limit Ciss 25µs 100 10,000 ID - Amperes Capacitance - PicoFarads 75 Coss 1,000 100µs 10 1ms TJ = 175ºC Crss TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK210N17T IXFX210N17T Fig. 13. Maximum Transient Thermal Impedance 1.000 Z (th )J C - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF:F_210N17T(9W)4-02-09