Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR18N90P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 10.5 A IDM TC = 25°C, pulse width limited by TJM 36 A IA EAS TC = 25°C TC = 25°C 9 800 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight Isolated Tab G = Gate S = Source Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 900 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 9A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 6.0 V ± 100 nA D = Drain Fearures z z z z z z Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Fast intrinsic diode Avalanche rated Low package inductance Advantages z z Low gate drive requirement High power density Applications: z TJ = 125°C 900V 10.5A Ω 660mΩ 300ns ISOPLUS247 E153432 Symbol TJ = = ≤ ≤ z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 25 μA 1.5 mA 660 mΩ DS100058(10/08) IXFR18N90P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 9A, Note 1 6 RGi Gate input resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 9A RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 9A Qgd ISOPLUS247 (IXFR) Outline 10 S 1.2 Ω 5230 pF 366 pF 53 pF 40 ns 33 ns 60 ns 44 ns 97 nC 30 nC 40 nC 0.62 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 18 A ISM Repetitive, pulse width limited by TJM 72 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 ns IF = 9A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.0 μC 10.8 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR18N90P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 18 40 VGS = 10V 9V 8V 16 32 14 28 12 ID - Amperes ID - Amperes VGS = 10V 9V 36 7V 10 8 6 8V 24 20 7V 16 12 6V 4 8 2 6V 4 5V 5V 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0 10.0 3 6 9 12 15 18 21 24 27 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature 18 30 3.2 VGS = 10V 9V 8V 16 VGS = 10V 2.8 RDS(on) - Normalized ID - Amperes 14 7V 12 10 8 6V 6 2.4 I D = 18A 2.0 I D = 9A 1.6 1.2 4 0.8 5V 2 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 150 12 2.8 11 VGS = 10V 2.6 TJ = 125ºC 10 2.4 9 2.2 8 ID - Amperes RDS(on) - Normalized -25 VDS - Volts 2.0 1.8 1.6 7 6 5 4 1.4 3 1.2 2 TJ = 25ºC 1.0 1 0.8 0 0 4 8 12 16 20 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 24 28 32 36 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR18N90P Fig. 8. Transconductance Fig. 7. Input Admittance 32 18 28 16 TJ = - 40ºC 14 20 g f s - Siemens ID - Amperes 24 TJ = 125ºC 25ºC - 40ºC 16 12 25ºC 12 10 125ºC 8 6 8 4 4 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 4 8 12 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 55 50 9 24 28 32 VDS = 450V I D = 9A 8 40 I G = 10mA 7 35 VGS - Volts IS - Amperes 20 Fig. 10. Gate Charge 10 45 30 25 20 TJ = 125ºC 15 6 5 4 3 10 2 TJ = 25ºC 1 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 10 20 VSD - Volts 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 16 ID - Amperes Coss 100 0.10 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_18N90P(76)10-22-08