Preliminary Technical Information IXGH36N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G C G = Gate E = Emitter IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C 36 A IF110 TC = 110°C 20 A ICM TC = 25°C, 1ms 200 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 80 @ ≤ VCES A PC TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Advantages 300 260 °C °C z 1.13/10 Nm/lb.in. 6 g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10 seconds Plastic Body for 10 seconds Md Mounting Torque Weight Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V TJ =125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved 1.5 C = Collector TAB = Collector Features z z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package High Power Density Low Gate Drive Requirement Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) (TAB) E z z z 5.0 V 35 μA 1.25 mA z ±100 nA z 1.8 V z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100141A(06/09) IXGH36N60B3C1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 28 IC = 30A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz 42 S 2430 pF 390 pF 28 pF Cres Qg Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) 80 nC 12 nC 36 nC 20 ns 26 ns mJ tri Inductive load, TJ = 25°°C Eon IC = 30A, VGE = 15V 0.39 td(off) VCE = 400V, RG = 5Ω 125 tfi Note 2 Eoff td(on) tri Eon td(off) tfi TO-247 Outline 200 ns 100 160 ns 0.80 1.50 mJ 20 Inductive load, TJ = 125°°C ns 27 ns IC = 30A, VGE = 15V 0.43 mJ VCE = 400V, RG = 5Ω 180 ns Note 2 170 ns 1.50 mJ Eoff 0.50 °C/W RthJC RthCS ∅P Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC °C/W 0.21 Reverse Diode (SiC) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 20A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 1.65 1.80 TJ = 125°C RthJC Notes 2.10 V V 0.90 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH36N60B3C1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 300 VGE = 15V 13V 11V 9V 250 40 IC - Amperes IC - Amperes 50 VGE = 15V 13V 11V 7V 30 20 9V 200 150 7V 100 10 50 5V 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2 4 6 Fig. 3. Output Characteristics @ 125ºC 12 14 1.40 VGE = 15V 13V 11V 9V VGE = 15V 1.30 VCE(sat) - Normalized 50 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 60 40 7V 30 20 5V 10 I C = 60A I C = 30A I C = 15A 1.20 1.10 1.00 0.90 0 0.80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 VCE - Volts 50 75 100 125 150 9 10 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 240 3.8 TJ = 25ºC 3.4 2.6 C IC - Amperes I TJ = - 40ºC 25ºC 125ºC 200 3.0 VCE - Volts 8 VCE - Volts VCE - Volts = 60A 30A 15A 2.2 160 120 80 1.8 40 1.4 0 1.0 4 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 3 4 5 6 7 VGE - Volts 8 IXGH36N60B3C1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 90 TJ = - 40ºC 80 VCE = 300V 12 I G = 10mA I C = 30A 25ºC 60 VGE - Volts g f s - Siemens 70 14 125ºC 50 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 220 240 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 90 10,000 70 Cies 1,000 IC - Amperes Capacitance - PicoFarads 80 Coes 60 50 40 30 100 f = 1 MHz Cres 10 0 5 10 15 20 25 30 35 20 TJ = 125ºC 10 RG = 5Ω dV / dt < 10V / ns 0 100 40 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS REF: G_36N60B3C1(55)6-05-09 IXGH36N60B3C1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 7 Eon - --- 2.4 TJ = 125ºC , VGE = 15V VCE = 400V 5 4 1.6 3 1.2 I C = 30A 2 0.8 1 0.4 I C = 15A 0 0 10 20 30 40 50 60 70 80 90 100 110 3.2 1.2 TJ = 125ºC, 25ºC 2.4 0.6 0.8 0.3 0.0 0.0 120 0.0 15 20 25 30 ---- RG = 5Ω , VGE = 15V 320 1.8 300 tf i 280 TJ = 125ºC, VGE = 15V 1.6 E on - MilliJoules 1.4 2.4 1.2 I 2.0 C = 60A 1.0 45 55 65 75 85 95 105 115 260 800 240 700 220 I 300 140 200 0.0 125 120 0 10 20 30 40 220 240 200 220 160 150 140 100 120 TJ = 25ºC 50 0 35 40 80 90 100 110 100 120 45 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 50 55 60 230 tfi td(off) - - - - 210 VCE = 400V 200 190 180 170 I 160 I C C = 30A 150 = 60A 140 130 I C = 15A 120 100 100 80 80 110 90 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 70 125 t d(off) - Nanoseconds 180 TJ = 125ºC 30 70 RG = 5Ω , VGE = 15V t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 400V 25 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds tfi 20 50 RG - Ohms RG = 5Ω , VGE = 15V 15 600 = 15A, 30A, 60A 160 350 200 C 0.2 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 250 900 VCE = 400V TJ - Degrees Centigrade 300 1000 td(off) - - - - 0.4 I C = 15A 0.0 1100 400 0.8 35 60 180 0.6 I C = 30A 25 55 500 0.8 0.4 50 200 1.6 1.2 45 t d(off) - Nanoseconds VCE = 400V 2.8 E off - MilliJoules 2.0 t f i - Nanoseconds 3.2 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.0 Eon 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.9 1.6 RG - Ohms 3.6 1.5 VCE = 400V 2.0 = 60A ---- E on - MilliJoules C Eon RG = 5Ω , VGE = 15V 4.0 E on - MilliJoules I 1.8 Eoff Eoff - MilliJoules Eoff 6 Eoff - MilliJoules 4.8 2.8 IXGH36N60B3C1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 150 td(on) - - - - 100 TJ = 125ºC, VGE = 15V 120 C = 60A 90 70 75 60 50 I C = 30A I 45 C = 15A 40 30 30 15 20 0 10 20 30 40 50 60 70 80 90 100 110 td(on) - - - - VCE = 400V 50 20 20 19 10 18 0 10 120 17 15 20 25 23 35 22 30 21 VCE = 400V 40 20 I C = 30A 30 19 20 18 10 I C 45 55 65 75 40 45 50 55 60 85 95 105 115 TJ = 25ºC 25 TJ = 125ºC 20 15 10 17 5 16 125 0 = 15A 0 IF - Amperes t r i - Nanoseconds 24 40 t d(on) - Nanoseconds td(on) - - - - RG = 5Ω , VGE = 15V 35 35 Fig. 21. Forward Current vs. Forward Voltage I C = 60A 70 25 30 IC - Amperes 80 50 21 30 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tr i 22 TJ = 125ºC, 25ºC 40 RG - Ohms 60 23 t d(on) - Nanoseconds I 80 t d(on) - Nanoseconds VCE = 400V 0 tr i RG = 5Ω , VGE = 15V 90 105 60 24 60 t r i - Nanoseconds tr i 135 t r i - Nanoseconds 70 110 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF - Volts TJ - Degrees Centigrade Fig. 22. Maximum Transient Thermal Impedance for Diode 1.00 Z(th)JC - ºC / W 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS REF: G_36N60B3C1(55)6-05-09