IXTA3N50D2 IXTP3N50D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) = > ≤ 500V 3A 1.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VGSX Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250μA 500 VGS(off) VDS = 25V, ID = 250μA - 2.0 IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V RDS(on) VGS = 0V, ID = 1.5A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 V - 4.0 V ±100 nA 5 μA 50 μA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 1.5 3 • Easy to Mount • Space Savings • High Power Density Ω A Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100148B(12/09) IXTA3N50D2 IXTP3N50D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 1.5A, Note 1 1.3 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz 2.1 S 1070 pF 102 pF 24 pF Crss td(on) tr td(off) tf Qgs 27 ns 71 ns 56 ns 42 ns 40 nC 5 nC Dim. Millimeter Min. Max. Inches Min. Max. 20 nC A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Resistive Switching Times VGS = ± 5V, VDS = 250V, ID = 1.5A RG = 3.3Ω (External) Qg(on) VGS = 5V, VDS = 250V, ID = 1.5A Qgd 1.00 °C/W RthJC RthCS TO-263 (IXTA) Outline TO-220 0.50 °C/W Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 400V, ID = 0.19A, TC = 75°C, Tp = 5s 75 W 1. 2. 3. 4. Gate Drain Source Drain Bottom Side TO-220 (IXTP) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VSD IF = 3A, VGS = -10V, Note 1 trr IRM QRM IF = 3A, -di/dt = 100A/μs VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 340 10.9 1.86 1.3 V ns A μC Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA3N50D2 IXTP3N50D2 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 16 3.0 VGS = 5V 3V 2V 1V 12 2V 2.0 ID - Amperes ID - Amperes 2.5 VGS = 5V 3V 14 0V 1.5 1.0 -1V 10 1V 8 6 0V 4 -1V 0.5 -2V 2 -3V 0.0 0.0 0.5 1.0 1.5 2.0 -2V 0 2.5 3.0 3.5 0 5 10 20 25 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Drain Current @ T J = 25ºC 3.0 1.E+00 VGS = 5V 2V 1V VGS = - 2.50V 1.E-01 - 2.75V - 3.00V 0V 2.0 1.E-02 ID - Amperes ID - Amperes 30 VDS - Volts VDS - Volts 2.5 15 -1V 1.5 1.0 - 3.25V - 3.50V 1.E-03 - 3.75V 1.E-04 -2V 0.5 - 4.00V 1.E-05 -3V 0.0 1.E-06 0 1 2 3 4 5 6 7 0 100 200 VDS - Volts 300 400 500 600 VDS - Volts Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ T J = 100ºC 1.E+08 1.E+00 ∆VDS = 350V - 100V VGS = -2.75V 1.E+07 -3.00V -3.25V 1.E-02 1.E+06 R O - Ohms ID - Amperes 1.E-01 -3.50V TJ = 25ºC 1.E+05 TJ = 100ºC -3.75V 1.E-03 1.E+04 -4.00V 1.E-04 1.E+03 0 100 200 300 400 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 VGS - Volts -3.0 -2.8 -2.6 -2.4 IXTA3N50D2 IXTP3N50D2 Fig. 8. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 3.0 2.4 VGS = 0V 2.2 I D = 1.5A VGS = 0V 2.6 2.0 R DS(on) - Normalized R DS(on) - Normalized 2.6 1.8 1.6 1.4 1.2 1.0 0.8 5V - - - TJ = 125ºC 2.2 1.8 1.4 TJ = 25ºC 1.0 0.6 0.4 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 TJ - Degrees Centigrade 4 5 6 7 8 9 10 ID - Amperes Fig. 9. Input Admittance Fig. 10. Transconductance 10 6 VDS = 30V 9 TJ = - 40ºC VDS = 30V 5 8 25ºC g f s - Siemens ID - Amperes 7 6 5 4 TJ = 125ºC 25ºC - 40ºC 3 2 125ºC 4 3 2 1 1 0 -3.5 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 VGS - Volts 4 5 6 7 8 9 10 ID - Amperes Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 10 1.4 9 1.3 VGS = -10V 8 7 1.2 VGS(off) @ VDS = 25V IS - Amperes BV / VGS(off) - Normalized 3 1.1 BVDSX @ VGS = - 5V 1.0 6 5 4 TJ = 125ºC 3 TJ = 25ºC 2 0.9 1 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTA3N50D2 IXTP3N50D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 10,000 f = 1 MHz VDS = 250V 4 I D = 1.5A 3 Capacitance - PicoFarads Ciss I G = 10mA 2 VGS - Volts 1,000 Coss 100 1 0 -1 -2 -3 -4 Crss -5 10 0 5 10 15 20 25 30 35 0 40 5 10 VDS - Volts 25 30 35 40 Fig. 16. Forward-Bias Safe Operating Area @ T C = 75ºC @ T C = 25ºC 100.0 100.0 RDS(on) Limit RDS(on) Limit 10.0 10.0 25µs ID - Amperes ID - Amperes 20 QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area 100µs 1ms 1.0 25µs 100µs 1.0 1ms 10ms TJ = 150ºC TJ = 150ºC 100ms TC = 25ºC Single Pulse DC Fig. 17. Maximum Transient 0.1 10.00 15 10ms TC = 75ºC Single Pulse Thermal Impedance 100ms DC 0.1 10 100 10 1,000 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance 2.00 Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N50D2(3C)8-17-09-A