MICROSEMI 2N3251A

580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
2N3251A
Features
•
•
•
•
60 Volts
200 mAmps
Meets MIL-S-19500/323
Collector-Base Voltage 60V
Collector Current: 200 mA
Fast Switching 370 nS
PNP
BIPOLAR
TRANSISTOR
Maximum Ratings
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
o
@ T A = 25 C
o
Derate above 25 C
Total Device Dissipation
o
@ T C = 25 C
o
Derate above 25 C
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Mechanical Outline
Datasheet# MSC0281A 5/19/97
SYMBOL
MAX.
UNIT
VCEO
VCBO
VEBO
IC
PD
-60
-60
-5.0
-200
Vdc
Vdc
Vdc
mAdc
0.36
2.4
Watts
o
mW/ C
1.2
8
-65 to
+175
-65 to
+175
417
146
Watts
o
mW/ C
o
C
PD
TJ
TS
RθJA
RθJC
o
C
o
C/W
C/W
o
2N3251A
Electrical Parameters (TA @ 25°°C unless otherwise specified)
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage(1) (I C = -10 mAdc)
Collector-Base Breakdown Voltage (I C = -10 µAdc)
Emitter-Base Breakdown Voltage (I E = -10 µAdc)
Collector Cutoff Current (V CE = -40 Vdc, V EB = -3.0 Vdc)
( at 150 C )
Base Cutoff Current (V CE = -40 Vdc, V EB = -3.0 Vdc)
D.C. Current Gain
(I C = -0.1 mAdc, V CE = -1.0 Vdc)
(I C = -1.0 mAdc, V CE = -1.0 Vdc)
(I c = -1.0mAdc, V CE= -1.0Vdc) @ -55C
(I C = -10 mAdc, V CE = -1.0 Vdc)(1)
(I C = -50 mAdc, V CE = -1.0 Vdc)(1)
Collector-Emitter Saturation Voltage(1)
(I C = -10 mAdc, I B = -1.0 mAdc)
(I C = -50 mAdc, I B = -5.0 mAdc)
Base-Emitter Saturation Voltage(1)
(I C = -10 mAdc, I B = -1.0 mAdc)
(I C = -50 mAdc, I B = -5.0 mAdc)
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(I C = -10 mAdc, V CE = -20 Vdc, f = 100MHz)
Output Capacitance
(V CB = -10 Vdc, I E = 0, 100kHz < f < 1MHz)
Input Capacitance
(V EB = -10 Vdc, I C = 0, 100kHz < f < 1MHz)
Input Impedance
(I C = -1.0 mA, V CE = -10 V, f = 1.0 kHz)
Voltage Feedback Ratio
(I C = -1.0 mA, V CE = -10 V, f = 1.0 kHz)
Small—Signal Current Gain
(I C = -1.0 mA, V CE = -10 V, f = 1.0 kHz)
Output Admittance
(I C = -1.0 mA, V CE = -10 V, f = 1.0 kHz)
Collector Base Time Constant
(I C = -10 mA, V CE = -20 V, f = 31.8 MHz)
Noise Figure
(I C = -100 µA, VCE = -5.0 V, R S = 1.0kΩ, f = 100 Hz)
Switching Speeds
(VCC = -3.0 Vdc, V BE = +0.5 Vdc
IC = -10 mAdc, I B1 = -1.0 mA)
(VCC = -10 mAdc, I B1 = IB1 = -1.0 mAdc)
(VCC = -3.0 V)
(1) Pulse Test: PW = 300 µs, Duty Cycle = 2.0%
Datasheet# MSC0281A 5/19/97
SYMBOL
MIN.
BVCEO
BVCBO
BVEBO
ICEX
-60
-60
-5.0
--
IBEX
hFE
TYP.
MAX.
UNIT
--
----20
-20
-50
Vdc
Vdc
Vdc
nA
uA
nAdc
--
80
90
40
100
30
---300
--
---
-0.25
-0.5
-0.6
--
-0.9
-1.2
3.0
9.0
--
6.0
--
8.0
2.0
12
Vdc
VCE(Sat)
Vdc
VBE(Sat)
/hfe/
pf
COBO
pf
CIBO
kohms
hje
x 10
hre
--
20
100
400
10
60
5
250
--
6.0
ton
--
70
ns
toff
--
300
ns
-4
--
hfe
µmhos
hoe
ps
rb’CC
dB
NF