COMMUNICATIONS COMPONENTS 2.5 Gb/s Front-Illuminated APD Chip Key Features • Front illuminated device for ease of assembly, with 53 micron diameter active region • -40 to 85 °C operating temperature range • -33 dBm typical sensitivity (TIA dependent) • Better than -6 dBm overload performance (TIA dependent) • Uses proven, highly reliable JDSU APD designs Applications • GPON • SONET OC-48 • Ethernet Compliance • Fully qualified for Telcordia GR-468-CORE • RoHS compliant NORTH AMERICA : 800 498-JDSU (5378) The JDSU 2.5 Gb/s front-illuminated avalanche photodiode (FI-APD) is designed for Gigabit Passive Optical Networks (GPON) that enable data transmissions for fiber-to-the-home (FTTH) offerings. As a result of their internal gain, APDs can significantly enhance receiver sensitivity relative to a standard PI photodiode. This FI-APD uses JDSU proprietary APD designs known for their superior reliability. The dark current at 95% of breakdown voltage is typically in the subnano-amp range. It has an optical window of 53 µm, and a remote metal bond pad of 60 µm. The FI-APD has an operating temperature range from -40 °C to 85 °C, and the sensitivity with a low noise TIA can reach -33 dBm. All APD chips come from wafers that have JDSU qualifed. Qualification includes burn-in and functional testing of a sample quantity of chips from each wafer.. Each die shipped is tested at 25 °C. WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com 2.5 GB/S FRONT-ILLUMINATED APD CHIP 2 Dimensions Diagram: P-side 60 µm 53 µm 250 µm A1 (Specifications in µm unless otherwise noted. ) Die size 250 µm x 250 µm Die thickness 125 ± 15 µm Optical window Ø53µm Metal bond pad Ø60µm P-metal Ti/PtAu (500/500/6000 Å) N-metal AuSn (1000 Å) An identification number appears on p-side of chip B2 250 µm Absolute Maximum Ratings Parameter Soldering temperature APD voltage supply (VAPD) Maximum optical input power Reverse current Forward current ESD threshold (HBM) Storage temperature Operating temperature Minimum Maximum 250 °C Vbr V 3 mW 5 mA 10 mA 300 V -40 °C -40 °C +100 °C +90 °C Specifications Parameter Electrical / Optical 1 Diameter APD responsivity Breakdown voltage, Vbr Vbr temperature coefficient Total dark current APD gain Bandwidth Capacitance Operating Conditions Operating wavelength Operating temperature Overload Test Conditions λ=1550 nm, M=1 Id=10 µA Vbr-2 V Vbr-2 V, Po=1 µW M=9, Po=1 µW Vbr-2 V, f=1 MHz 1. Test Conditions: 25 °C, 50 ohm load, 1550 nm, beginning of Life (BOL), unless otherwise specified. Minimum Typical Maximum 0.85 A/W 33 V 0.1%/°C 9 3 GHz - 53 µm 1 nA 10 - 53 V 0.3%/°C 10 nA 0.6 pF 1260 nm -40 °C -6 dBm - 1575 nm +90 °C - 2.5 GB/S FRONT-ILLUMINATED APD CHIP Device Qualification All shipped bare die come from wafers that meet JDSU APD qualification. The wafer qualification includes electrical, optical, RF and 168-hour reliability testing. In accordance with Telecordia GR-468-CORE, each shipped bare die is fully tested at 25 °C, including breakdown voltage and dark current at Vbr-2V. JDSU recommends that all assembled devices be burned in prior to installation. Electrostatic Discharge (ESD) Take precautions to protect the FI-APD from ESD during handling. Failure to do so may result in damage to product. Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at [email protected]. Sample: RXA M DC51 081 01 - 003 RXA M DC51 081 0 Code 01 02 NORTH AMERICA : 800 498-JDSU (5378) -003 Package Shipped in a Gel pak Shipped on blue tape WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30149287 Rev. 001 01/08 FIAPD.DS.CC.AE Telcordia is a registered trademark of Telcordia Technologies Incorporated. January 2008