JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation 2 PCM: W (Tamb=25℃) 1. BASE Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Emitter cut-off current IEBO VEB=9V, IC=0 100 µA hFE(1) VCE= 5V, IC= 2 A 8 40 hFE(2) VCE=5 V, IC=5A 5 30 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V fT Ic=500mA,VCE=10V f=1MHZ Cob VCE=10,IE=0, f=0.1MHz Fall time tf Vcc=125V, Ic=5A 0.7 µs Storage time ts IB1=-IB2=1A 3 µs DC current gain Transition frequency Collector output capacitance 4 MHZ pF 80 CLASSIFICATION OF hFE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40