R BAT85 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES DO-35 For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive 1.083(27.5) MIN JF voltage, such as electrostatic discharges. This diode is also available in the MiniMELF case with type designation LL85. 0.079(2.0) MAX DIA High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 0.150(3.8) MAX 1.083(27.5) MIN MECHANICAL DATA 0.020(0.52) MAX DIA Case: DO-35 glass case Polarity: color band denotes cathode end Dimensions in inches and (millimeters) Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Repetitive Peak Reverse Voltage Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp<1s, d <0.5, Surge forward current at tp<10ms , Power Dissipation at TA=25 C TA=25 C TA=65 C Junction temperature Ambient Operating temperature Range Storage Temperature Range Symbols Value VR IF IFM IFSM Ptot TJ TA TSTG 30 200 300 600 200 Units V mA 1) 1) mA mA mW 1) 1) 125 C C -65 to+125 -65 to+150 C 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS Min. Symbols Reverse breakdown voltage Tested with 100mA pulses V(BR)R Typ. Max. Unis V 30 Forward voltage Pulse Test tp 300ms,d 2% at IF=0.1mA, at IF=1mA, at IF=10mA, at IF=30mA, at IF=100mA 0.24 0.32 0.4 VF VF VF VF VF Leakage current VR=25V Junction Capacitance at VR=1V ,f=1MHz Reverse recovery time Form IF=10mA,IR=10mA,IR=1mA Thermal resistance junction to ambient Air 0.8 2 mA 0.50 IR CJ trr RqJA V V V V V 10 pF 5 ns 300 1) K/W 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35) 2-32 JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096 WWW.JIFUSEMICON.COM