EGF20A THRU EGF20M RC P G S E M I C O N D U C T O R SUPER FAST RECTIFIER Reverse Voltage: 50 to 1000 Volts Forward Current:2.0Amperes FEATURES SILICON RECTIFIER Ｒ SMB(DO-214AA) GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction For Surface Mount Applications ０．１５５（３．９４） ０．１３０（３．３０） Easy to pick and place Low forward voltage drop,High current capability ０．０８６（２．２０） ０．０７７（１．９５） High surge current capability Super fast recovery time ０．１８０（４．５７） ０．１６０（４．０６） Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ０．０１２（０．３０５） ０．００６（０．１５２） MECHANICAL DATA ０．０９６（２．４４） ０．０８４（２．１３） Case: JEDEC SMB(DO-214AA) molded plastic body Terminals: solder plated ,solderable per MIL-STD-750,method 2026 ０．００８（０．２０３） ＭＡＸ ０．０６０（１．５２） ０．０３０（０．７６） Polarity: color band denotes cathode end ０．２２０（５．５９） ０．２０５（５．２１） Weight: 0.003ounce,0.093 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load. For capacitive load,derate current by 20%.) Symbols EGF 20A EGF 20B EGF 20D EGF 20F EGF 20G EGF 20J EGF 20K EGF 20M 50 100 200 300 400 600 800 1000 35 70 140 210 280 420 480 700 50 100 200 300 400 600 800 1000 Maximum DC Blocking Voltage VRRM VRMS VDC Maximum Average Forward Rectified Current 0.375"(9.5mm)lead Length at Ta=55 C I(AV) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 65.0 VF 0.95 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum Instantaneous Forward Voltage at 1.0 A Maximum DC Reverse Current At Rated DC Blocking Voltage TA=25 C Typical Junction Capacitance(Note2) Operating Junction and Storage Temperature Range Volts Volts Volts Amp 2.0 1.25 60.0 Amps 1.7 Volts 5.0 IR A 100 TA=100 C Maximum Reverse Recovery Time(Note1) Units Trr CJ 50 75 45 TJ TSTG -65 to+125 -65 to+150 ns PF C Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts. 8-16 JINAN JINGHENG CO., LTD. ＮＯ．５１ ＨＥＰＩＮＧ ＲＯＡＤ ＰＲ ＣＨＩＮＡ ＴＥＬ：８６－５３１－６９４３６５７ ＦＡＸ：８６－５３１－６９４７０９６ WWW.JIFUSEMICON.COM FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE （＋） 50Vdc (APPROX) 10 NON INDUCTIVE ＋０．５Ａ PULSE GENERATOR (NOTE2) D.U.T. （－） 1 NON INDUCTIVE AVERAGE FORWARD CURRENT (A) FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NON INDUCTIVE Ｔｒｒ ０ －０．２５Ａ OSCILLOSCOPE (NOTE1) －１．０Ａ NOTES:1.Rise Time=7ns max. input impedance=1 megohm 22pF 2.Rise Time=10ns max. source impedance =50 ohms INSTANTANEOUS REVERSE CURRENT ,(mA) INSTANTANEOUS FORWARD CURRENT( AMPERES) １ TA=25 C Pulse Width=300 s 1% Duty Cycle ０．０１ ０．８ １．０ EGF20A-EGF20G １．０ EGF20J-EGF20M ０．５ ０ ２５ ５０ ７５ １００ １２５ １５０ １７５ FIG.4-TYPICAL REVERSE CHARACTERISTICS EGF20G ０．６ １．５ AMBIENT TEMPERATURE ( C) EGF20J-EGF20M ０．４ ２．０ ０ EGF20A-EGF20F ０．２ Single Phase Half Wave 60hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length ２．５ SET TIME BASE FOR 5/10 ns/cm １０ ０ ３．０ １ｃｍ FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS ０．１ SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES EGF20A THRU EGF20M １．２ １００ TJ=100 C １０ １．０ TJ=25 C ０．１ １．４ INSTANTANEOUS FORWARD VOLTAGE (VOLTS) ０．０１ ０ ２０ ４０ ６０ ８０ １００ １２０ １４０ PERCENT OF RATED PEAK REVERSE VOLTAGE(%) FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.6-TYPICAL JUNCTION CAPACITANCE ７０ PEAK FORWARD SURGE CURRENT(AMPERES) JUNCTION CAPACITANCE(pF) １７５ ６０ TA=25 C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) ５０ ４０ ３０ ２０ EGF20A-EGF20G １０ EGF20J-EGF20M ０ １ ５ １０ ５０ １５０ １２５ １００ ７５ TJ=25 C ５０ ２５ １ １００ ０．１ NUMBER OF CYCLES AT 60Hz ０．５ １ ２ ５ １０ ２０ ５０ １００ REVERSE VOLTAGE. (V) 8-17 JINAN JINGHENG CO., LTD. ＮＯ．５１ ＨＥＰＩＮＧ ＲＯＡＤ ＰＲ ＣＨＩＮＡ ＴＥＬ：８６－５３１－６９４３６５７ ＦＡＸ：８６－５３１－６９４７０９６ WWW.JIFUSEMICON.COM