TYPICAL PERFORMANCE CURVES
APT100GN120B2
1200V
APT100GN120B2
APT100GN120B2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
®
®
T-Max
G
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Integrated Gate Resistor: Low EMI, High Reliability
C
E
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT100GN120B2
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 110°C
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
8
UNIT
Volts
245
8
100
1
Amps
300
Switching Safe Operating Area @ TJ = 150°C
300A @ 1200V
Total Power Dissipation
960
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
(VCE = VGE, I C = 4mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C)
I GES
RG(int)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
MAX
5.0
5.8
6.5
1.4
1.7
2.1
Volts
2.0
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
100
2
µA
TBD
Gate-Emitter Leakage Current (VGE = ±20V)
Integrated Gate Resistor
Units
1200
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C)
I CES
TYP
600
7.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
nA
Ω
12-2007
V(BR)CES
MIN
Rev A
Characteristic / Test Conditions
050-7626
Symbol
APT100GN120B2
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Qgc
SSOA
Total Gate Charge
3
Gate-Emitter Charge
TYP
Capacitance
6500
VGE = 0V, VCE = 25V
365
f = 1 MHz
280
Gate Charge
9.5
VGE = 15V
540
VCE = 600V
50
I C = 100A
295
Gate-Collector ("Miller ") Charge
TJ = 150°C, R G = 4.3Ω 7, VGE =
Switching Safe Operating Area
MIN
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
50
tr
Current Rise Time
VCC = 800V
50
td(off)
Turn-off Delay Time
VGE = 15V
615
Current Fall Time
I C = 100A
105
RG = 1.0Ω 7
11
Eon2
4
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
TJ = +25°C
5
Turn-off Switching Energy
td(on)
Turn-on Delay Time
Inductive Switching (125°C)
50
tr
Current Rise Time
VCC = 800V
50
Turn-off Delay Time
VGE = 15V
725
Current Fall Time
I C = 100A
210
RG = 1.0Ω 7
12
tf
Eon1
Eon2
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
ns
mJ
9.5
44
Turn-on Switching Energy (Diode)
nC
15
6
Eoff
td(off)
V
A
Turn-on Delay Time
Eon1
UNIT
pF
300
td(on)
tf
MAX
55
TJ = +125°C
ns
mJ
22
66
14
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.13
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
6.1
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
050-7626
Rev A
12-2007
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Continuous Current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
V
GE
15V
= 15V
13V
IC, COLLECTOR CURRENT (A)
TJ = -55°C
250
IC, COLLECTOR CURRENT (A)
APT100GN120B2
300
300
TJ = 25°C
200
TJ = 125°C
150
TJ = 175°C
100
50
250
12V
200
11V
150
10V
100
9V
8V
50
7V
0
0
0
1.0
2.0
3.0
4.0
5.0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
200
TJ = 25°C
150
TJ = -55°C
100
50
0
VCE = 240V
12
VCE = 600V
10
VCE = 960V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
J
0
100
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.0
IC = 200A
2.5
IC = 100A
2.0
IC = 50A
1.5
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.05
3.5
3
IC = 200A
2.5
IC = 100A
2
1.5
IC = 50A
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
350
1.15
1.10
600
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
200
300
400
500
GATE CHARGE (nC)
300
250
200
150
Lead Temperature
Limited
100
50
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
12-2007
IC, COLLECTOR CURRENT (A)
TJ = 125°C
I = 100A
C
T = 25°C
14
Rev A
TJ = 150°C
050-7626
250µs PULSE
TEST<0.5 % DUTY
CYCLE
250
0
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
300
0
5
10
15
20
25
30
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
APT100GN120B2
1000
VGE = 15V
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
60
50
40
30
20
VCE = 800V
10 T = 25°C, or 125°C
J
RG = 1.0Ω
L = 100µH
0
600
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
400
200
VCE = 800V
RG = 1.0Ω
L = 100µH
0
10
40
70
100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
250
800
10
40
70 100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
RG = 1.0Ω, L = 100µH, VCE = 800V
200
200
tf, FALL TIME (ns)
tr, RISE TIME (ns)
TJ = 125°C, VGE = 15V
150
100
150
100
TJ = 25°C, VGE = 15V
50
50
TJ = 25 or 125°C,VGE = 15V
10
40
70 100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
10
40
70
100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
30,000
V
= 800V
CE
V
= +15V
GE
R = 1.0Ω
G
60,000
TJ = 125°C
40,000
20,000
TJ = 25°C
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
80,000
10
40
70
100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
J
60,000
40,000
Eoff,200A
Eon2,100A
Eoff,100A
Eon2,50A
Eoff,50A
0
TJ = 125°C
20,000
15,000
10,000
5000
TJ = 25°C
10
40
70
100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
5
10
15
20
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
SWITCHING ENERGY LOSSES (µJ)
12-2007
Rev A
050-7626
Eon2,200A
80,000
0
G
25,000
80,000
V
= 800V
CE
V
= +15V
GE
T = 125°C
20,000
V
= 800V
CE
V
= +15V
GE
R = 1.0Ω
0
0
100,000
RG = 1.0Ω, L = 100µH, VCE = 800V
0
0
V
= 800V
CE
V
= +15V
GE
R = 1.0Ω
Eon2,200A
G
60,000
40,000
Eoff,200A
20,000
Eoff,100A
0
Eon2,100A
Eon2,50A
Eoff,50A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000
APT100GN120B2
350
IC, COLLECTOR CURRENT (A)
Cies
P
C, CAPACITANCE ( F)
5,000
1,000
500
Coes
300
250
200
150
100
50
Cres
0
100
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.12
D = 0.9
0.10
0.7
0.08
0.5
0.06
0.04
SINGLE PULSE
0.1
t1
t2
0.05
0.02
0
Note:
0.3
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.14
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.0467
0.00088
0.0233
0.649
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
20
10
0
T = 125°C
J
T = 75°C
C
D = 50 %
= 800V
V
CE
R = 1.0Ω
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
G
20 40
60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
12-2007
0.0558
30
Rev A
0.0273
Dissipated Power
(Watts)
40
050-7626
TC (°C)
ZEXT
TJ (°C)
FMAX, OPERATING FREQUENCY (kHz)
50
APT100GN120B2
Gate Voltage
APT100DQ120
10%
TJ = 125°C
td(on)
tr
V CE
IC
V CC
Collector Current
90%
5%
5%
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
12-2007
Rev A
050-7626
2.87 (.113)
3.12 (.123)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.