MICROSEMI 2N2605

TECHNICAL DATA
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
Devices
Qualified Level
2N2604
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
JAN, JANTX
JANTXV
2N2605
@ TA = +250C(1)
Operating & Storage Junction Temperature Range
Symbol
2N2604
2N2605
Units
VCBO
VCEO
VEBO
IC
PT
80
70
Vdc
Vdc
Vdc
mAdc
mW/0C
0
C
TJ, Tstg
60
6.0
30
400
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.28 mW/0C above TA = +250C
Symbol
RθJC
Max.
0.437
Unit
C/mW
TO-46*
(TO-206AB)
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
V(BR)CBO
80
70
Vdc
V(BR)CEO
60
Vdc
V(BR)EBO
6.0
Vdc
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 µAdc
2N2604
2N2605
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Emitter-Base Breakdown Current
IE = 10 µAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
ICBO
10
ηAdc
IEBO
2.0
ηAdc
ICES
10
ηAdc
120101
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2N2604, 2N2605 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
40
100
60
150
40
100
120
300
180
450
160
400
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
2N2604
2N2605
2N2604
2N2605
2N2604
2N2605
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 µAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 µAdc
hFE
VCE(sat)
0.3
Vdc
Vdc
VBE(sat)
0.7
0.9
2N2604
2N2605
hie
1.0
2.0
10
20
2N2604
2N2605
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f= 1.0 kHz
2N2604
2N2605
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 0.5 mAdc, VCE = 5.0 Vdc, f = 30 MHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Noise Figure
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 100 Hz
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 1.0 kHz
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 10 kHz
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
hoe
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
40
60
hfe
60
150
180
450
hfe
1.0
8.0
kΩ
µmhos
Cobo
6.0
pF
F1
F2
F3
5.0
3.0
3.0
dB
120101
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