JMNIC 2N3446

Product Specification
www.jmnic.com
2N3446
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Excellent safe operating area
APPLICATIONS
・Designed for medium-switching
and amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
7.5
A
115
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.17
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Product Specification
www.jmnic.com
2N3446
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A;IB=1.5A
3.0
V
VBE
Base-emitter on voltage
IC=3A ; VCE=5V
1.5
V
ICEO
Collector cut-off current
VCE=100V; IB=0
0.7
mA
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=3A ; VCE=5V
20
hFE-2
DC current gain
IC=7A ; VCE=5V
4
2
MIN
TYP.
MAX
100
UNIT
V
60
Product Specification
www.jmnic.com
2N3446
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3