Product Specification www.jmnic.com 2N5241 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V 5 A 125 W IC Collector current PT Total power dissipation Tj Junction temperature 165 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.46 ℃/W Tc=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com 2N5241 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V ICBO Collector cut-off current VCB=400V; IE=0 TC=125℃ 0.2 2.0 mA ICEO Collector cut-off current VCE=400V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=2.5A ; VCE=5V JMnic 400 UNIT 15 V 35 Product Specification www.jmnic.com 2N5241 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic