JMNIC 2N5742

Product Specification
www.jmnic.com
2N5741 2N5742
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector-emitter saturation voltage
・Fast switching speed
APPLICATIONS
・For general–purpose switching
and power amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5741
VCBO
Collector-base voltage
60
Open base
2N5742
VEBO
V
100
2N5741
Collector-emitter voltage
Emitter-base voltage
UNIT
60
Open emitter
2N5742
VCEO
VALUE
V
100
Open collector
5
V
20
A
65
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.875
℃/W
TC=100℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N5741 2N5742
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
2N5741
MIN
TYP.
MAX
UNIT
60
IC=0.2A ;IB=0
2N5742
V
100
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=20A ;IB=4A
3.0
V
Base-emitter saturation voltage
IC=10A; IB=1A
1.8
V
VBE
Base-emitter on voltage
IC=10A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
0.1
mA
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
TC=150℃
0.5
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=10A ; VCE=5V
20
hFE-2
DC current gain
IC=20A ; VCE=5V
10
Transition frequency
IC=1A ; VCE=10V
10
VBEsat
fT
JMnic
80
MHz
Product Specification
www.jmnic.com
2N5741 2N5742
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic