Product Specification www.jmnic.com 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage CONDITIONS 2N5883 VALUE 60 Open emitter 2N5884 V 80 2N5883 60 Open base V 2N5884 Emitter-base voltage UNIT 80 Open collector 5 V IC Collector current 25 A ICM Collector current-peak 50 A IB Base current 7.5 A PD Total Power Dissipation 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5883 2N5884 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(sus) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5883 MIN TYP. MAX UNIT 60 IC=0.2A ;IB=0 2N5884 V 80 VCEsat-1 Collector-emitter saturation voltage IC=15A; IB=1.5A 1 V VCEsat-2 Collector-emitter saturation voltage IC=25A ;IB=6.25A 4 V VBEsat Collector-emitter saturation voltage IC=25A ;IB=6.25A 2.5 V VBE Base-emitter on voltage IC=10A ; VCE=4V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 1 mA ICEO Collector cut-off current 2 mA ICEV Collector cut-off current (VBE(off)=1.5V) 2N5883 VCE=30V; IB=0 2N5884 VCE=40V; IB=0 VCE=ratedVCEO; 1 VCE=ratedVCEO; TC=150℃ 10 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=3A ; VCE=4V 35 hFE-2 DC current gain IC=10A ; VCE=4V 20 hFE-3 DC current gain IC=25A ; VCE=4V 4 Trainsistion frequency IC=1A ; VCE=10V;f=1MHz 4 Collector base capacitance IE=0; VCB=10V;f=1MHz fT Ccbo mA 100 MHz 500 pF 0.7 μs 1 μs 0.8 μs Switching times tr Rise time ts Storage time tf Fall time IC=10A ;IB1=- IB2=1A VCC=30V JMnic Product Specification www.jmnic.com 2N5883 2N5884 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic