Product Specification www.jmnic.com 2N6077 2N6078 2N6079 Silicon NPN Power Transistors DESCRIPTION ・・With TO-66 package ・Low collector-emitter saturation voltage ・High breakdown voltage APPLICATIONS ・For horizontal deflection output stages of TV’s and CRT’s PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6077 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6078 Open emitter 250 2N6079 350 2N6077 300 2N6078 Emitter-base voltage UNIT 275 Open base 2N6079 VEBO VALUE 275 V V 375 Open collector 6 V 7 A 45 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 4.28 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6077 2N6078 2N6079 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6077 VCEO(sus) Collector-emitter sustaining voltage 2N6078 MIN TYP. MAX UNIT 275 IC=0.1A ;IB=0 V 250 350 2N6079 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.2 V ICEO Collector cut-off current VCE= Rated VCEO; IB=0 2.0 mA ICEX Collector cut-off current VCE=Rated VCEO; VBE(off)=1.5V TC=125℃ 0.1 1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=1.2A ; VCE=1V Transition frequency IC=0.5A;VCE=10V;f=1MHz fT JMnic 12 70 7 MHz Product Specification www.jmnic.com 2N6077 2N6078 2N6079 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions JMnic