2 1 3 4 2 1 3 4 Anti-Parallel Parallel APT2X100D60J APT2X101D60J 2 3 1 4 SO 2 T- 27 "UL Recognized" ISOTOP ® APT2X101D60J APT2X100D60J 600V 100A 600V 100A file # E145592 DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers • Low Leakage Current All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Density Characteristic / Test Conditions APT2X100_101D60J VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 160 IF(RMS) IFSM TJ,TSTG TL UNIT Maximum D.C. Reverse Voltage 600 Volts Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V TYP MAX IF = 100A 1.6 2.0 IF = 200A 1.7 IF = 100A, TJ = 125°C 1.4 Volts VR = 600V 250 VR = 600V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 170 UNIT μA pF 9-2009 VF MIN 053-6007 Rev H Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 34 trr Reverse Recovery Time - 180 Qrr Reverse Recovery Charge - 390 - 5 - 220 ns - 1450 nC - 13 - 110 - 2550 - 40 MIN TYP IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/μs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/μs IF = 100A, diF/dt = -1000A/μs VR = 400V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance .42 RθJA Junction-to-Ambient Thermal Resistance 20 WT Torque Package Weight 29.2 g 0.9 0.7 0.30 0.25 0.5 Note: 0.20 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.45 0.35 0.3 0.15 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 0 t1 t2 0.10 SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 0.1 °C/W oz Maximum Terminal & Mounting Torque 0.40 UNIT 1.03 Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-6007 Rev H 9-2009 MAX 10 lb•in 1.1 N•m APT2X101_100D60J TYPICAL PERFORMANCE CURVES 250 300 T =125°C J V =400V IF, FORWARD CURRENT (A) 250 200 150 TJ = 150°C 100 50 0 TJ = 25°C TJ = 125°C trr, REVERSE RECOVERY TIME (ns) 200A 100A 50A 150 100 50 0 0 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 0 200 50 T =125°C J V =400V 200A R 2500 100A 2000 1500 50A 1000 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) R TJ = -55°C 3000 T =125°C J V =400V 200A R 40 30 100A 20 50A 10 0 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0 200 160 1.4 Qrr 1.2 trr 1.0 trr 0.8 IRRM 0.6 Duty cycle = 0.5 T =150°C J 140 120 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 200 100 80 60 Qrr 0.4 0.2 0.0 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 1400 1200 1000 800 600 400 200 0 .4 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-6007 Rev H 9-2009 CJ, JUNCTION CAPACITANCE (pF) 1600 APT2X101_100D60J Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2X100D60J APT2X101D60J Anode 2 Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 053-6007 Rev H 9-2009 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.