JMnic Product Specification 2N6420 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Continuous collector current-IC=-1A ・Power dissipation -PD=35W @TC=25℃ ・Complement to type 2N3583 APPLICATIONS ・High speed switching and linear amplifier ・High-voltage operational amplifiers ・Switching regulators ,converters ・Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -250 V VCEO Collector-emitter voltage Open base -175 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.0 A ICM Collector current-Peak -5.0 A IB Base current -1.0 A PT Total power dissipation 35 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case JMnic Product Specification 2N6420 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-50mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.125A -5.0 V VBE Base -emitter on voltage IC=-1A ; VCE=-10V -1.4 V ICEX Collector cut-off current VCE=-225V;VBE(off)=-1.5V TC=150℃ -1.0 -3.0 mA ICEO Collector cut-off current VCE=-150V IB=0 -10 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -5.0 mA hFE-1 DC current gain IC=-0.1A ; VCE=-10V 40 hFE-2 DC current gain IC=-0.5A ; VCE=-10V 40 hFE-3 DC current gain IC=-1A ; VCE=-10V 10 2 MIN TYP. MAX -175 UNIT V 200 JMnic Product Specification 2N6420 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3