JMNIC 2N6542

JMnic
Product Specification
Silicon NPN Power Transistors
2N6542 2N6543
DESCRIPTION
・With TO-3 package
・High voltage,high speed
APPLICATIONS
・Switching regulators
・PWM inverters and motor controls
・Solenoid and relay drivers
・Deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6542
VCBO
Collector-base voltage
300
Open base
2N6543
VEBO
Emitter-base voltage
V
850
2N6542
Collector-emitter voltage
UNIT
650
Open emitter
2N6543
VCEO
VALUE
V
400
Open collector
8
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
5
A
IE
Emitter current
10
A
IEM
Emitter current-peak
20
A
PD
Total Power Dissipation
100
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
TC=25℃
JMnic
Product Specification
Silicon NPN Power Transistors
2N6542 2N6543
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
2N6542
MIN
TYP.
MAX
UNIT
300
IC=0.1A ;IB=0
V
400
2N6543
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=5A; IB=1.0A
5.0
V
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.4
V
2N6542
VCE=650V; VBE(off)=1.5V
TC=100℃
0.5
3.0
2N6543
VCE=850V; VBE(off)=1.5V
TC=100℃
0.5
3.0
1.0
VBEsat
ICEV
Collector cut-off current
mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=1.5A ; VCE=2V
12
60
hFE-2
DC current gain
IC=3A ; VCE=2V
7
35
Trainsistion frequency
IC=0.2A ; VCE=10V;f=1MHz
6
35
MHz
0.05
μs
0.7
μs
4.0
μs
0.8
μs
fT
mA
Switching times
td
Delay time
tr
Rise time
tstg
tf
VCC=250V; IC=3.0A
IB1=-IB2=0.6A;tp=0.1ms
Storage time
Fall time
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
VALUE
UNIT
1.75
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2N6542 2N6543
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3