JMnic Product Specification 2SA1141 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC2681 ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -115 V VCEO Collector-emitter voltage Open base -115 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -15 A PC Collector power dissipation TC=25℃ 100 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1141 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS TYP. MAX UNIT IC=-4.5A ;IB=-0.45A -0.7 -1.5 V Base-emitter on voltage IC=-4.5A ; VCE=-2V -1.2 -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-1A ; VCE=-2V 60 hFE -2 DC current gain IC=-4.5A ; VCE=-2V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 390 pF fT Transition frequency IC=-1A ; VCE=-2V 90 MHz hFE-1 classifications R Q 60-120 100-200 2 MIN 200 JMnic Product Specification 2SA1141 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3