JMNIC 2SA1186

JMnic
Product Specification
2SA1186
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・High current capability
・Complement to type 2SC2837
APPLICATIONS
・Audio and general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
IB
Base current
-2
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1186
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-3A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-80V;f=1MHz
110
pF
fT
Transition frequency
IE=1A ; VCE=-12V
60
MHz
0.25
μs
0.80
μs
0.20
μs
-150
UNIT
V
50
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A
VCC=-60V
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
JMnic
Product Specification
2SA1186
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SA1186
Silicon PNP Power Transistors
4