JMnic Product Specification 2SA1220 2SA1220A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2690/2690A APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA1220 VCBO Collector-base voltage -120 Open base 2SA1220A VEBO Emitter-base voltage V -160 2SA1220 Collector-emitter voltage UNIT -120 Open emitter 2SA1220A VCEO VALUE V -160 Open collector -5 V IC Collector current -1.2 A ICM Collector current-peak -2.5 A IB Base current -0.3 A PD Total power dissipation Ta=25℃ 1.2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ JMnic Product Specification 2SA1220 2SA1220A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=-1A; IB=-0.2A -0.7 V Base-emitter saturation voltage IC=-1A ;IB=-0.2A -1.3 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-5mA ; VCE=-5V 35 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 60 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 26 pF fT Transition frequency IC=-0.2A ; VCE=5V 175 MHz CONDITIONS hFE-2 Classifications R Q P 60-120 100-200 160-320 2 MIN TYP. 320 JMnic Product Specification 2SA1220 2SA1220A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA1220 2SA1220A Silicon PNP Power Transistors 4