JMnic Product Specification 2SA1261 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High switching speed ・Low collector saturation voltage ・Complement to type 2SC3157 APPLICATIONS ・For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -10 A ICM Collector current-Peak -20 A IB Base current -3.5 A PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1261 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-5A ;IB1=-0.5A;L=1mH VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -0.01 mA ICEX Collector cut-off current VCE=-100V; VBE=-1.5V Ta=125℃ -0.01 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.01 mA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 200 hFE-2 DC current gain IC=-3A ; VCE=-5V 40 200 hFE-3 DC current gain IC=-5A ; VCE=-5V 20 -100 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;IB1=-IB2=-0.5A , RL=10Ω;VCC=-50V hFE-2 classifications M L K 40-80 60-120 100-200 2 0.5 μs 1.5 μs 0.5 μs JMnic Product Specification 2SA1261 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3