JMnic Product Specification 2SA1265N Silicon PNP Power Transistors DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SC3182 ・2SA1265 with short pin APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -1 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1265N Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -0.8 -2.0 V VBE Base-emitter voltage IC=-5A ; VCE=-5V -1.0 -1.5 V ICBO Collector cut-off current VCB=-140V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-5A ; VCE=5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 480 pF CONDITIONS hFE-1 Classifications R O 55-110 80-160 2 MIN TYP. MAX -140 UNIT V 160 JMnic Product Specification 2SA1265N Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SA1265N Silicon PNP Power Transistors 4