JMnic Product Specification 2SA1305 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High transition frequency APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter -30 VCEO Collector-emitter voltage Open base -30 VEBO Emitter-base voltage Open collector -5 V -3 A IC PC Collector current TC=25℃ 15 Ta=25℃ 2 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1305 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA , IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-30V;IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-0.5A ; VCE=-3V Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS 2 MIN TYP. 60 MAX UNIT 320 100 MHz JMnic Product Specification 2SA1305 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3