Product Specification www.jmnic.com 2SA1360 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC3423 ・High transition frequency APPLICATIONS ・Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -50 mA IB Base current -5 mA PD Total power dissipation Ta=25℃ 1.2 TC=25℃ 5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ JMnic Product Specification www.jmnic.com 2SA1360 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-10mA; IB=-1mA -1.0 V VBE Base-emitter on voltage IC=-10mA ; VCE=-5V -0.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 μA hFE DC current gain IC=-10mA ; VCE=-5V Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 2.5 pF fT Transition frequency IC=-10mA ; VCE=-10V 200 MHz hFE Classifications O Y 80-160 120-240 JMnic -150 UNIT V 80 240 Product Specification www.jmnic.com 2SA1360 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic