JMNIC 2SA1388

JMnic
Product Specification
2SA1388
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・High speed switching time
・Complementary to 2SC3540
APPLICATIONS
・High current switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current (DC)
-5
A
ICM
Collector current (pulse)
-8
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1388
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.15A
-0.2
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-3A ;IB=-0.15A
-0.9
-1.2
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-1
μA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70
hFE-2
DC current gain
IC=-3A ; VCE=-1V
30
Trainsition frequency
IC=-1A ; VCE=-4V
60
MHz
Collector output capacitance
IE=0; VCE=-10V;f=1MHz
200
pF
0.2
μs
1.0
μs
0.1
μs
fT
Cob
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
240
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=-0.15A
VCC=30V;RL=10Ω
hFE-1 Classifications
O
Y
70-140
120-240
2
JMnic
Product Specification
2SA1388
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
2SA1388
Silicon PNP Power Transistors
4