JMnic Product Specification 2SA1513 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High current capability ・Low collector saturation voltage APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V -15 A IC Collector current Ta=25℃ PC 3.5 W Collector power dissipation TC=25℃ 60 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1513 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-12 A;IB=-0.6 A -0.5 V VBEsat Base-emitter saturation voltage IC=-12 A;IB=-0.6 A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-2V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 300 pF fT Transition frequency IC=-1.5A ; VCE=-10V 80 MHz 2 MIN TYP. 100 MAX UNIT 400 JMnic Product Specification 2SA1513 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3