JMnic Product Specification 2SA1659 2SA1659A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4370/4370A ・High transition frequency fT APPLICATIONS ・High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA1659 VCBO Collector-base voltage -160 Open base 2SA1659A VEBO Emitter-base voltage V -180 2SA1659 Collector-emitter voltage UNIT -160 Open emitter 2SA1659A VCEO VALUE V -180 Open collector -5 V IC Collector current -1.5 A IB Base current -0.15 A PC Collector dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1659 2SA1659A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1659 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT -160 IC=10mA ; IB=0 2SA1659A VCEsat MIN V -180 Collector-emitter saturation voltage IC=-0.5A;IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-160V;IE=0 -1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 μA hFE DC current gain IC=-0.1A ; VCE=-5V fT Transition frequency IC=-0.1A ; VCE=-10V 100 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF hFE classifications O Y 70-140 120-240 2 70 240 JMnic Product Specification 2SA1659 2SA1659A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3