JMNIC 2SA1887

JMnic
Product Specification
2SA1887
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Low collector saturation voltage
APPLICATIONS
・High current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-7
V
-10
A
IC
Collector current
PC
Collector dissipation
TC=25℃
25
W
Ta=25℃
2.0
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1887
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.25A
-0.2
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.25A
-0.95
-1.4
V
ICBO
Collector cut-off current
VCB=-70V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-1.0
μA
hFE
DC current gain
IC=-1A ; VCE=-1V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
215
pF
fT
Transition frequency
IC=-1A ; VCE=-1V
45
MHz
2
MIN
TYP.
MAX
-50
UNIT
V
120
400
JMnic
Product Specification
2SA1887
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3