JMnic Product Specification 2SA490 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC790 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A IE Emitter current 3 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA490 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.45 -1.2 V VBE Base-emitter voltage IC=-2A ; VCE=-2V -0.85 -1.8 V ICBO Collector cut-off current VCB=-30V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 hFE-2 DC current gain IC=-2A ; VCE=-2V 13 COB Collector output capacitance IE=0 ; VCB=-10V;f=1MHz Transition frequency IC=-0.5A ; VCE=-2V VCEsat fT CONDITIONS hFE-1 Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. UNIT 240 50 150 3 MAX pF MHz JMnic Product Specification 2SA490 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3