JMnic Product Specification 2SA679 2SA680 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1079/1080 ・High power dissipation APPLICATIONS ・For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SA679 VCBO Collector-base voltage -120 Open base 2SA680 VEBO Emitter-base voltage V -100 2SA679 Collector-emitter voltage UNIT -120 Open emitter 2SA680 VCEO VALUE V -100 Open collector -5 V IC Collector current -12 A IE Emitter current 12 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA679 2SA680 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA679 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT -120 IC=-0.1A ;IB=0 2SA680 V(BR)EBO MIN V -100 Emitter-base breakdown voltage IE=-10mA ;IC=0 Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-10A ; VCE=-5V -2.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-2A ; VCE=-5V 40 hFE-2 DC current gain IC=-7A ; VCE=-5V 15 COB Output capacitance IE=0 ; VCB=-10V; f=1.0MHz fT Transition frequency IC=-2A ; VCE=-5V VCEsat hFE-1 Classifications R Y 40-80 70-140 2 -5 V 140 900 pF 6 MHz JMnic Product Specification 2SA679 2SA680 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3