JMNIC 2SA907

JMnic
Product Specification
2SA907/908/909
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SC1584/1585/1586
APPLICATIONS
・For power switching and general purpose
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2SA907
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SA908
Open emitter
Emitter-base voltage
-150
2SA909
-200
2SA907
-100
2SA908
UNIT
-100
Open base
2SA909
VEBO
VALUE
-150
V
V
-200
Open collector
-6
V
IC
Collector current
-15
A
IB
Base current
-5
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
JMnic
Product Specification
2SA907/908/909
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA907
V(BR)CEO
Collector-emitter
breakdown voltage
2SA908
ICBO
Collector-emitter saturation voltage
Collector cut-off current
IC=-50mA ;IB=0
MAX
UNIT
V
-150
-200
IC=-10A; IB=-1A
2SA907
VCB=-100V; IE=0
2SA908
VCB=-150V; IE=0
2SA909
VCB=-200V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
fT
TYP.
-100
2SA909
VCEsat
MIN
2
-3.0
V
-1.0
mA
-1.0
mA
30
10
MHz
JMnic
Product Specification
2SA907/908/909
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3