JMnic Product Specification 2SA957 2SA958 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High breakdown voltage ・High power dissipation APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA957 VCBO Collector-base voltage -150 Open base 2SA958 VEBO Emitter-base voltage V -200 2SA957 Collector-emitter voltage UNIT -150 Open emitter 2SA958 VCEO VALUE V -200 Open collector -6 V IC Collector current -2.0 A IB Base current -1.0 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA957 2SA958 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA957 VCEO(BR) Collector-emitter breakdown voltage Collector-emitter saturation voltage UNIT V -200 IC=-0.7A; IB=-0.07A -1.5 V -100 μA -1.0 mA VCB=-150V; IE=0 Collector cut-off current 2SA958 VCB=-200V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-0.7A ; VCE=-10V Transition frequency IC=-0.2A ; VCE=-12V fT MAX IC=-25mA ,IB=0 2SA957 ICBO TYP. -150 2SA958 VCEsat MIN 40 20 MHz 0.4 μs 1.5 μs 0.5 μs Switching times resistive load tr Rise time ts Storage time tf Fall time IC=-1.0A IB1=- IB2=-0.1A RL=20Ω;VCC=-20V 2 JMnic Product Specification 2SA957 2SA958 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3