JMNIC 2SA985A

JMnic
Product Specification
2SA985 2SA985A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SC2275/2275A
・High breakdown voltage
APPLICATIONS
・For low frequency and high frequency
power amplifer applicatons
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA985
VCBO
Collector-base voltage
-120
Open base
2SA985A
VEBO
Emitter-base voltage
V
-150
2SA985
Collector-emitter voltage
UNIT
-120
Open emitter
2SA985A
VCEO
VALUE
V
-150
Open collector
-5
V
IC
Collector current
-1.5
A
ICM
Collector current-peak
-3.0
A
IB
Base current
-0.3
A
PT
Total power dissipation
Ta=25℃
1.5
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA985 2SA985A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA985
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
-120
IC=-25mA ,IB=0
2SA985A
‹
MIN
V
-150
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.3
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.9
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-5mA ; VCE=-5V
35
hFE-2
DC current gain
IC=-0.3A ; VCE=-5V
60
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
29
pF
fT
Transition frequency
IC=-0.2A ; VCE=-5V
180
MHz
hFE-2 Classifications
R
Q
P
60-120
100-200
160-320
2
150
320
JMnic
Product Specification
2SA985 2SA985A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3