JMNIC 2SB1034

JMnic
Product Specification
2SB1034
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Low collector saturation voltage
・High DC current gain
・DARLINGTON
APPLICATIONS
・For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-8
V
IC
Collector current (DC)
-2
A
IB
Base current (DC)
-0.5
A
PC
Total power dissipation
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB1034
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-1A ;IB=-1mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-1mA
-2.0
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-8V; IC=0
-4
mA
hFE
DC current gain
IC=-1A ; VCE=-2V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
30
pF
fT
Transition frequency
IC=-0.5A ; VCE=-2V
50
MHz
0.4
μs
2.0
μs
0.4
μs
-80
UNIT
V
2000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
RL=30Ω
IB1=IB2=1mA
VCC=-30V
2
JMnic
Product Specification
2SB1034
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3