JMnic Product Specification 2SB1071 2SB1071A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching APPLICATIONS ・For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB1071 VCBO Collector-base voltage -20 Open base 2SB1071A VEBO Emitter-base voltage V -50 2SB1071 Collector -emitter voltage UNIT -40 Open emitter 2SB1071A VCEO VALUE V -40 Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1071 2SB1071A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB1071 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -20 IC=-10mA ,IB=0 2SB1071A V -40 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 Transition frequency IC=-0.5A ; VCE=-5V fT 260 150 MHz 0.3 μs 0.4 μs 0.1 μs Switching times ton Turn-on time tstg Storage time tf IC=-2A; IB1=-IB2=-0.2A Fall time hFE-2 Classifications R Q P 60-120 90-180 130-260 2 JMnic Product Specification 2SB1071 2SB1071A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3