JMnic Product Specification 2SB1096 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Complement to type 2SD1587 APPLICATIONS ・For TV vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector -emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V -2 A IC PC Collector current Ta=25℃ 2.0 TC=25℃ 25 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1096 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-500mA ;IB=-50mA -1.0 V VBEsat Base-emitter saturation voltage IC=-500mA ;IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE DC current gain IC=-0.4A ; VCE=-10V Transition frequency IC=-0.4A; VCE=-10V fT CONDITIONS hFE Classifications M L K 40-80 60-120 100-200 2 MIN TYP. 40 MAX UNIT 200 5 MHz JMnic Product Specification 2SB1096 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3