JMnic Product Specification 2SB1097 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SD1588 APPLICATIONS ・For low frequency power amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V -7 A IC Collector current PC Collector power dissipation Ta=25℃ 2.0 W TC=25℃ 30 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1097 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-1V CONDITIONS hFE Classifications M L K 40-80 60-120 100-200 2 MIN 40 TYP. MAX 200 UNIT JMnic Product Specification 2SB1097 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3