JMNIC 2SB1098

JMnic
Product Specification
2SB1098
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD1589
・DARLINGTON
・High DC current gain
APPLICATIONS
・Low speed switching industrial use
・Low frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-5
A
ICM
Collector current-peak
-8
A
IB
Base current
-0.5
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1098
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter saturation voltage
VBEsat
MIN
TYP.
MAX
UNIT
IC=-3A; IB=-3mA
-1.5
V
Base-emitter saturation voltage
IC=-3A; IB=-3mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V ;IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3
mA
hFE-1
DC current gain
IC=-3A ; VCE=-2V
2000
hFE-2
DC current gain
IC=-5A ; VCE=-2V
500
15000
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A ;IB1=-IB2=-3mA
RL=17Ω;VCC=-50V;
hFE-1 Classifications
R
O
Y
2000-5000
3000-7000
5000-15000
2
0.5
μs
1
μs
1
μs
JMnic
Product Specification
2SB1098
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3