JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V -3 A -0.5 A IC Collector current IB Base current PC Collector dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1375 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 -1.5 V VBE Base-emitter voltage IC=-0.5A;VCE=-5V -0.75 -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -10 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 100 hFE-2 DC current gain IC=-2A ; VCE=-5V 15 Transition frequency IC=-0.5A ; VCE=-5V 9 MHz Collector output capacitance IE=0; f=1MHz;VCB=-10V 50 pF fT COB CONDITIONS 2 MIN TYP. MAX -60 UNIT V 320 JMnic Product Specification 2SB1375 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SB1375 Silicon PNP Power Transistors 4