JMNIC 2SB1604

JMnic
Product Specification
2SB1604 2SB1604A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Low collector saturation voltage
・High speed switching
APPLICATIONS
・For low-voltage switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB1604
VCBO
Collector-base voltage
-20
Open base
2SB1604A
VEBO
Emitter-base voltage
V
-50
2SB1604
Collector-emitter voltage
UNIT
-40
Open emitter
2SB1604A
VCEO
MAX
V
-40
Open collector
-5
V
IC
Collector current
-10
A
ICM
Collector current-peak
-20
A
PC
Collector dissipation
Ta=25℃
2
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1604 2SB1604A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB1604
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
-20
IC=-10mA ;IB=0
2SB1604A
V
-40
VCEsat
Collector-emitter saturation voltage
IC=-10A ;IB=-0.33A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-10A ;IB=-0.33A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-3A ; VCE=-2V
90
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
400
pF
fT
Transition frequency
IC=-0.5A ; VCE=-10V
100
MHz
0.1
μs
0.5
μs
0.1
μs
260
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-3A; IB1=-IB2=-0.1A
Fall time
hFE-2 Classifications
Q
P
90-180
130-260
2
JMnic
Product Specification
2SB1604 2SB1604A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SB1604 2SB1604A
Silicon PNP Power Transistors
4