Product Specification www.jmnic.com 2SB656 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipation APPLICATIONS ・For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IB Base current -4 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Product Specification www.jmnic.com 2SB656 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-1A ; VCE=-10V VCEsat fT CONDITIONS hFE Classifications B C 60-120 100-200 2 MIN TYP. 60 MAX UNIT 200 20 MHz Product Specification www.jmnic.com 2SB656 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3