JMNIC 2SB668

JMnic
Product Specification
2SB668
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・High DC current gain
・DARLINGTON
APPLICATIONS
・For use in power amplifier and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector; connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB668
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA, IB=0
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA, IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-2mA, IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ,IB=-8mA
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A ,IB=-8mA
-2.5
V
ICBO
Collector cut-off current
VCB=-120V, IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-100V, IB=0
-500
μA
IEBO
Emitter cut-off current
VEB=-5V, IC=0
-2
mA
hFE
DC current gain
IC=-1A ; VCE=-3V
2
MIN
2000
TYP.
MAX
UNIT
JMnic
Product Specification
2SB668
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3