JMNIC 2SB753

JMnic
Product Specification
2SB753
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD843
・Low collector saturation voltage
・High power dissipation
APPLICATIONS
・High current switching applications
・Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
-7
A
IC
PC
Collector current
Ta=25℃
1.5
TC=25℃
40
Collector dissipation
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
JMnic
Product Specification
2SB753
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-0.3
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-0.4A
-0.9
-1.4
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-5
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70
hFE-2
DC current gain
IC=-4A ; VCE=-1V
30
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
250
pF
fT
Transition frequency
IC=-1A ; VCE=-4V
10
MHz
0.4
μs
2.5
μs
0.5
μs
-80
UNIT
V
240
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IB1=- IB2=-0.3A ; VCC=-30V
RL=10Ω
Fall time
hFE-1Classifications
O
Y
70-140
120-240
2
JMnic
Product Specification
2SB753
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
JMnic
Product Specification
2SB753
Silicon PNP Power Transistors
4