JMnic Product Specification 2SB755 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SD845 ・High transition frequency ・High breakdown voltage :VCEO=-150V(min) APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IB Base current -1.2 A PC Collectorl power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB755 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A; IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE DC current gain IC=-1A ; VCE=-5V fT Transition frequency IC=-1A ; VCE=-10V 20 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 450 pF VCEsat CONDITIONS hFE classifications R O 55-110 80-160 2 MIN TYP. 55 MAX UNIT 160 JMnic Product Specification 2SB755 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3