JMnic Product Specification 2SB827 Silicon PNP Power Transistors · DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1063 ・Wide area of safe operation ・Low collector-emitter saturation voltage : VCE(sat)=(–)0.4V max. APPLICATIONS ・Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICP Collector current (Pulse) -14 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB827 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.4 V ICBO Collector cut-off current VCB=-40V ;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-5A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.20 μs 0.70 μs 0.10 μs Switching times ton Turn-on time tstg Storage time tf IC=-2.0A; IB1=-IB2=-0.2A VCC=-20V;RL=10Ω Fall time hFE-1 Classifications Q R S 70-140 100-200 140-280 2 JMnic Product Specification 2SB827 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 JMnic Product Specification 2SB827 Silicon PNP Power Transistors 4