JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V -3 A -0.5 A IC Collector current IB Base current PC Collector power dissipation Ta=25℃ 1.5 W TC=25℃ 30 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB834 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR) CEO Collector-emitter breakdown voltage IC=-50mA ; IB=0 Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.7 -1.0 V Collector-emitter saturation voltage IC=-3A;IB=-0.3A -0.5 -1.0 V ICBO Collector cut-off current VCB=-60V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Cob Collector output capacitance IE=0; VCB=-10V; f=1MHz Transition frequency IC=-0.5A ; VCE=-5V VBE VCEsat fT CONDITIONS MIN TYP. MAX -60 UNIT V 200 150 pF 9 MHz 0.4 μs 1.7 μs 0.5 μs Switching times ton Turn-on time ts Storage time tf Fall time VCC=-30V; RL=15Ω IB1=-IB2=-0.2A hFE-1 classifications O Y 60-120 100-200 2 JMnic Product Specification 2SB834 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB834 Silicon PNP Power Transistors 4